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DMN60H4D5SK3 N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor .
Designed for use in switch mode power supplies and general purpose applications.

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Datasheet Specifications

Part number
DMN60H4D5SK3
Manufacturer
INCHANGE
File Size
261.20 KB
Datasheet
DMN60H4D5SK3-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Drain Current
* ID= 2.5A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 4.5Ω(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 600 V ±30 V ID Drain Current-Continuous 2.5 A IDM Drain Current-Single Pluse 2.6 A PD Total Dissipation @TC=25℃ 41 W TJ Max. Operating Junction Temperatu

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