EKG1020 - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	EKG1020
Manufacturer	INCHANGE
File Size	244.63 KB
Description	N-Channel MOSFET
Datasheet	EKG1020-INCHANGE.pdf

EKG1020 Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 20 A PD Total Dissipation @TC=25℃ 55 W TJ Max.Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.27 ℃

Features

Drain Current.
ID=20A@ TC=25℃.
Drain Source Voltage- : VDSS=100V(Min).
Static Drain-Source On-Resistance : RDS(on) = 52mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Mar 14, 2021 |