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EKG1020 N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor .
Designed for use in switch mode power supplies and general purpose applications.

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Datasheet Specifications

Part number
EKG1020
Manufacturer
INCHANGE
File Size
244.63 KB
Datasheet
EKG1020-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Drain Current
* ID=20A@ TC=25℃
* Drain Source Voltage- : VDSS=100V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 52mΩ(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 20 A PD Total Dissipation @TC=25℃ 55 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -

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