Datasheet4U Logo Datasheet4U.com

EKG1020

N-Channel MOSFET

EKG1020 Features

* Drain Current

* ID=20A@ TC=25℃

* Drain Source Voltage- : VDSS=100V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 52mΩ(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Designed for use in

EKG1020 General Description


*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 20 A PD Total Dissipation @TC=25℃ .

EKG1020 Datasheet (244.63 KB)

Preview of EKG1020 PDF

Datasheet Details

Part number:

EKG1020

Manufacturer:

INCHANGE

File Size:

244.63 KB

Description:

N-channel mosfet.

📁 Related Datasheet

EKG1020 Power MOSFET (Sanken)

EK-3024 Microphones (Knowles)

EK-3027 Microphones (Knowles)

EK-3028 Microphones (Knowles)

EK-3029 Microphones (Knowles)

EK-3031 Microphones (Knowles)

EK-3032 Microphones (Knowles)

EK-3033 Microphones (Knowles)

EK-3089 Microphones (Knowles)

EK-3103 Microphones (Knowles)

TAGS

EKG1020 N-Channel MOSFET INCHANGE

Image Gallery

EKG1020 Datasheet Preview Page 2

EKG1020 Distributor