FCPF125N65S3 - N-Channel MOSFET

Features

With To-220F package.
Low input capacitance and gate charge.
Low gate input resistance.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	FCPF125N65S3
Manufacturer	Inchange Semiconductor
File Size	196.26 KB
Description	N-Channel MOSFET
Datasheet	FCPF125N65S3 Datasheet
Additional preview pages of the FCPF125N65S3 datasheet.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor FCPF125N65S3 ·FEATURES ·With To-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 24 15 60 PD Total Dissipation @TC=25℃ 38 Tch Max.

Published: Sep 3, 2020 |