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FCPF125N65S3 N-Channel MOSFET

FCPF125N65S3 Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor FCPF125N65S3 *.

FCPF125N65S3 Features

* With To-220F package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FCPF125N65S3 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 24 15 60 PD Total Dissipation @TC=25℃ 38 Tch Max. Operating Ju

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Datasheet Details

Part number
FCPF125N65S3
Manufacturer
INCHANGE
File Size
196.26 KB
Datasheet
FCPF125N65S3-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE FCPF125N65S3-like datasheet