FCPF150N65F Datasheet - INCHANGE

FCPF150N65F, N-Channel MOSFET

isc N-Channel MOSFET Transistor *

Features

* With TO-220F packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 24 Tc=100℃ 14.9 A IDM Drain Current-Single Pulsed 72 A PD Total

FCPF150N65F-INCHANGE.pdf