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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
FDB035AN06A0
·FEATURES ·With TO-263(D2PAK) packaging ·Single pulse and repetitive pulse ·High speed switching ·Low miller charge ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS ·PFC stages, hard switching PWM stages and resonant switching ·PC Silverbox, Adapter, LCD & PDP TV ·Lighting, Server, Telecom and UPS
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±20
80 22
400
PD
Total Dissipation
310
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THER
FDB035AN06A0 Datasheet
