FDB060AN08A0 Datasheet, Mosfet, INCHANGE

FDB060AN08A0 Features

  • Mosfet
  • With TO-263 packaging
  • Drain Source Voltage- : VDSS ≥ 75V
  • Static drain-source on-resistance: RDS(on) ≤ 6mΩ@VGS=10V
  • 100% avalanche tested
  • Mini

PDF File Details

Part number:

FDB060AN08A0

Manufacturer:

INCHANGE

File Size:

272.57kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Datasheet Preview: FDB060AN08A0 📥 Download PDF (272.57kb)
Page 2 of FDB060AN08A0

FDB060AN08A0 Application

  • Applications
  • Power supply
  • Switching applications
  • ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS

TAGS

FDB060AN08A0
N-Channel
MOSFET
INCHANGE

📁 Related Datasheet

FDB060AN08A0 - MOSFET (Fairchild Semiconductor)
FDP060AN08A0 / FDB060AN08A0 — N-Channel PowerTrench® MOSFET October 2013 FDP060AN08A0 / FDB060AN08A0 N-Channel PowerTrench® MOSFET 75 V, 80 A, 6 mΩ .

FDB0690N1507L - N-Channel Power MOSFET (ON Semiconductor)
FDB0690N1507L N-Channel PowerTrench® MOSFET FDB0690N1507L N-Channel PowerTrench® MOSFET 150 V, 115 A, 6.9 mΩ Features „ Max rDS(on) = 6.9 mΩ at VGS.

FDB016N04AL7 - N-Channel MOSFET (Fairchild Semiconductor)
FDB016N04AL7 N-Channel PowerTrench® MOSFET June 2014 FDB016N04AL7 N-Channel PowerTrench® MOSFET 40 V, 306 A, 1.6 mW Features • RDS(on) = 1.16 mW (T.

FDB024N04AL7 - MOSFET (Fairchild Semiconductor)
FDB024N04AL7 N-Channel PowerTrench® MOSFET June 2014 FDB024N04AL7 N-Channel PowerTrench® MOSFET 40 V, 219 A, 2.4 mΩ Features • RDS(on) = 2.0 mΩ (Ty.

FDB024N06 - N-Channel MOSFET (Fairchild Semiconductor)
FDB024N06 — N-Channel PowerTrench® MOSFET FDB024N06 N-Channel PowerTrench® MOSFET 60 V, 265 A, 2.4 mΩ November 2013 Features • RDS(on) = 1.8 mΩ (Ty.

FDB024N08BL7 - MOSFET (Fairchild Semiconductor)
FDB024N08BL7 N-Channel PowerTrench® MOSFET June 2014 FDB024N08BL7 N-Channel PowerTrench® MOSFET 80 V, 229 A, 2.4 mΩ Features • RDS(on) = 1.7 mΩ ( T.

FDB029N06 - N-Channel MOSFET (Fairchild Semiconductor)
FDB029N06 — N-Channel PowerTrench® MOSFET FDB029N06 N-Channel PowerTrench® MOSFET 60 V, 193 A, 3.1 mΩ November 2013 Features • RDS(on) = 2.4 mΩ (Ty.

FDB031N08 - N-Channel MOSFET (Fairchild Semiconductor)
FDB031N08 — N-Channel PowerTrench® MOSFET FDB031N08 N-Channel PowerTrench® MOSFET 75 V, 235 A, 3.1 mΩ November 2013 Features • RDS(on) = 2.4 mΩ (Ty.

FDB035AN06A0 - N-Channel MOSFET (Fairchild Semiconductor)
FDB035AN06A0 July 2002 FDB035AN06A0 N-Channel PowerTrench® MOSFET 60V, 80A, 3.5mΩ Features • r DS(ON) = 3.2mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot).

FDB035AN06A0 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor FDB035AN06A0 ·FEATURES ·With TO-263(D2PAK) packaging ·Single pulse and repetitive pulse ·High.

Stock and price

onsemi
MOSFET N-CH 75V 16A/80A D2PAK
DigiKey
FDB060AN08A0
1600 In Stock
Qty : 800 units
Unit Price : $1.7
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts