FDB060AN08A0 Datasheet - INCHANGE

FDB060AN08A0, N-Channel MOSFET

isc N-Channel MOSFET Transistor FDB060AN08A0 *

Features

* With TO-263 packaging
* Drain Source Voltage- : VDSS ≥ 75V
* Static drain-source on-resistance: RDS(on) ≤ 6mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 80 A PD Total Dissipation 255 W Tj Operating Junction Temperature

FDB060AN08A0-INCHANGE.pdf