FKI06108
INCHANGE
247.86kb
N-channel mosfet.
TAGS
📁 Related Datasheet
FKI06108 - Power MOSFET
(Sanken)
60 V, 39 A, 7.0 mΩ Low RDS(ON) N ch Trench Power MOSFET
FKI06108
Features
V(BR)DSS --------------------------------- 60 V (ID = 100 µA) ID ------.
FKI06190 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage-
: VDSS=60V(Min) ·Static Drain-Source On-Resistance
: R.
FKI06190 - Power MOSFET
(Sanken)
60 V, 30 A, 12.1 mΩ Low RDS(ON) N ch Trench Power MOSFET
FKI06190
Features
V(BR)DSS --------------------------------- 60 V (ID = 100 µA) ID -----.
FKI06051 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=69A@ TC=25℃ ·Drain Source Voltage-
: VDSS=60V(Min) ·Static Drain-Source On-Resistance
: R.
FKI06051 - Power MOSFET
(Sanken)
60 V, 69 A, 3.9 mΩ Low RDS(ON) N ch Trench Power MOSFET
FKI06051
Features
V(BR)DSS --------------------------------- 60 V (ID = 100 µA) ID ------.
FKI06075 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 8mΩ@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-t.
FKI06075 - N-ch Trench Power MOSFET
(SANKEN)
60 V, 52 A, 5.1 mΩ Low RDS(ON) N ch Trench Power MOSFET
FKI06075
Features
V(BR)DSS --------------------------------- 60 V (ID = 100 µA) ID ------.
FKI06269 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=24A@ TC=25℃ ·Drain Source Voltage-
: VDSS=60V(Min) ·Static Drain-Source On-Resistance
: R.
FKI06269 - Power MOSFET
(Sanken)
60 V, 24 A, 17.2 mΩ Low RDS(ON) N ch Trench Power MOSFET
FKI06269
Features
V(BR)DSS --------------------------------- 60 V (ID = 100 µA) ID -----.
FKI07076 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=55A@ TC=25℃ ·Drain Source Voltage-
: VDSS=75V(Min) ·Static Drain-Source On-Resistance
: R.