Part number:
FMW47N60S1HF
Manufacturer:
INCHANGE
File Size:
209.12 KB
Description:
N-channel mosfet.
* With TO-247 packaging
* With low gate drive requirements
* Low switching loss
* Low on-state resistance
* Easy to drive
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATIONS
* Switching applications
FMW47N60S1HF Datasheet (209.12 KB)
FMW47N60S1HF
INCHANGE
209.12 KB
N-channel mosfet.
📁 Related Datasheet
FMW47N60S1HF - N-CHANNEL SILICON POWER MOSFET
(Fuji Electric)
FMW47N60S1HF
http://.fujielectric./products/semiconductor/ FUJI POWER MOSFET
Super J-MOS series
N-Channel enhancement mode power MOSFET
Feat.
FMW4 - dual transistors
(Rohm)
FMW3 / FMW4 / IMX8
Transistors
General purpose (dual transistors)
FMW3 / FMW4 / IMX8
Features 1) Two 2SC3906K chips in an SMT package. 2) High break.
FMW-2106 - Schottky Barrier Rectifier
(Sanken electric)
.DataSheet.co.kr
http://.sanken-ele.co.jp
SANKEN ELECTRIC FMW-2106
Schottky Barrier Rectifier
Mar. 2008
General Description
FMW-2106 is a Sc.
FMW-2156 - Schottky Diode
(Sanken electric)
VRM = 60 V, IF(AV) = 15 A Schottky Diode
FMW-2156
Data Sheet
Description
The FMW-2156 is a 60 V, 15 A Schottky diode with allowing improvements in V.
FMW-2206 - Schottky Barrier Rectifier
(Sanken electric)
.DataSheet.co.kr
http://.sanken-ele.co.jp
SANKEN ELECTRIC FMW-2206
Schottky Barrier Rectifier
Mar. 2008
General Description
FMW-2206 is a Sc.
FMW-24H - Silicon Schottky Barrier Diode
(Sanken)
SANKEN ELECTRIC CO., LTD.
1. Scope The present specifications shall apply to an FMW-24H.
2. Outline High Frequency Rectification
Type
Silicon Scho.
FMW-4304 - Schottky Diode
(Sanken)
VRSM = 40 V, IF(AV) = 30 A Schottky Diode
FMW-4304
Data Sheet
Description
The FMW-4304 is a 40 V, 30 A Schottky diode with allowing improvements in .
FMW-4306 - Schottky Diode
(Sanken)
VRSM = 60 V, IF(AV) = 30 A Schottky Diode
FMW-4306
Data Sheet
Description
The FMW-4306 is a 60 V, 30 A Schottky diode with allowing improvements in .