Datasheet4U Logo Datasheet4U.com

FW26025A1 PNP Transistor

FW26025A1 Description

isc Silicon PNP Darlington Power Transistor .
High DC Current Gain- : hFE = 5000(Min)@ IC= -2A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min). Minimum Lot-to-Lot vari.

FW26025A1 Applications

* Designed for linear and switching industrial equipment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -20 A ICM Collector Cur

📥 Download Datasheet

Preview of FW26025A1 PDF
datasheet Preview Page 2

Datasheet Details

Part number
FW26025A1
Manufacturer
INCHANGE
File Size
209.75 KB
Datasheet
FW26025A1-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • FW261 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
  • FW262 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
  • FW20020-24 - 2.0P HEADER 24P 6.2H STRAIGHT (FooSungtech)
  • FW20020-24S - 2.0P HEADER 24P 6.2H STRAIGHT (FooSungtech)
  • FW20020-24SB - 2.0P HEADER 24P 6.2H STRAIGHT (FooSungtech)
  • FW202 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • FW203 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • FW20A - Fusible Power Resistors (BOURNS)

📌 All Tags

INCHANGE FW26025A1-like datasheet