IPW60R070P6 N-Channel MOSFET

INCHANGE

IPW60R070P6 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R070P6 IIPW60R070P6 *.

IPW60R070P6 Features

* Static drain-source on-resistance: RDS(on)≤70mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Fast switching
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS

IPW60R070P6 Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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IPW60R070P6 Datasheet Preview — Preview of IPW60R070P6 PDF

Datasheet Details

Part number: IPW60R070P6
Manufacturer: INCHANGE
File Size: 243.87 KB
Datasheet: IPW60R070P6-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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