IPW60R280E6 - N-Channel MOSFET

INCHANGE

IPW60R280E6 Datasheet Preview — Preview of IPW60R280E6 PDF

Datasheet Details

Part number	IPW60R280E6
Manufacturer	INCHANGE
File Size	241.11 KB
Description	N-Channel MOSFET
Datasheet	IPW60R280E6-INCHANGE.pdf

IPW60R280E6 Product details

Description

Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13.8 IDM Drain Current-Single Pulsed 40 PD Total Dissipation @TC=25℃ 104 Tj Max.Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-t

Features

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Static drain-source on-resistance: RDS(on) ≤0.28Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 10, 2020 |