IPW65R660CFD Datasheet - INCHANGE

IPW65R660CFD N-Channel MOSFET

IPW65R660CFD Features

* Static drain-source on-resistance: RDS(on)≤660mΩ

* Enhancement mode:

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* Fast Switching

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS

Datasheet Details

IPW65R660CFD

INCHANGE

237.07 KB

N-channel mosfet.

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IPW65R660CFD N-Channel MOSFET INCHANGE

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