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IRF100B201 N-Channel MOSFET

IRF100B201 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF100B201， IIRF100B201 *.

IRF100B201 Features

* Static drain-source on-resistance: RDS(on) ≤4.2mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRF100B201 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 192 IDM Drain Current-Single Pulsed 690 PD Total Dissipation @TC=25℃ 441 Tj Max. Operating Junction Temperature 175 Tstg Storage

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Datasheet Details

Part number
IRF100B201
Manufacturer
INCHANGE
File Size
241.32 KB
Datasheet
IRF100B201-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRF100B201-like datasheet