IRF100B201 Datasheet - INCHANGE

IRF100B201, N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF100B201， IIRF100B201 *

Features

* Static drain-source on-resistance: RDS(on) ≤4.2mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 192 IDM Drain Current-Single Pulsed 690 PD Total Dissipation @TC=25℃ 441 Tj Max.
Operating Junction Temperature 175 Tstg Storage

IRF100B201-INCHANGE.pdf