Datasheet Details
- Part number
- IRFR8314
- Manufacturer
- INCHANGE
- File Size
- 237.94 KB
- Datasheet
- IRFR8314-INCHANGE.pdf
- Description
- N-Channel MOSFET
IRFR8314 Description
isc N-Channel MOSFET Transistor IRFR8314, IIRFR8314 *.
IRFR8314 Features
* Static drain-source on-resistance:
RDS(on)≤2.2mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
IRFR8314 Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
90
IDM
Drain Current-Single Pulsed
357
PD
Total Dissipation @TC=25℃
125
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Te
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