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IRFS59N10D N-Channel MOSFET

IRFS59N10D Description

Isc N-Channel MOSFET Transistor IRFS59N10D *.

IRFS59N10D Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRFS59N10D Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 59 42 236 PD Total Dissipation @TC=25℃ 200 Tch Max. Operating J

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Datasheet Details

Part number
IRFS59N10D
Manufacturer
INCHANGE
File Size
253.69 KB
Datasheet
IRFS59N10D-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRFS59N10D-like datasheet