IRFU9024N Datasheet - INCHANGE

IRFU9024N, P-Channel MOSFET

isc P-Channel MOSFET Transistor *

Features

* Static drain-source on-resistance: RDS(on)≤175mΩ(@VGS= -10V; ID= -6.6A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Fast switching application.

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -55 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -11 A PD Total Dissipation @TC=25℃ 28 W Tj Max.
Operating Junction Temperature -55~150

IRFU9024N-INCHANGE.pdf