JCS650S - N-Channel MOSFET

INCHANGE

JCS650S Datasheet Preview — Preview of JCS650S PDF

Datasheet Details

Part number	JCS650S
Manufacturer	INCHANGE
File Size	250.63 KB
Description	N-Channel MOSFET
Datasheet	JCS650S-INCHANGE.pdf

JCS650S Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 28 A IDM Drain Current-Single Pluse 112 A PD Total Dissipation @TC=25℃ 158 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal R

Features

Drain Current.
ID= 28A@ TC=25℃.
Drain Source Voltage- : VDSS=200V(Min).
Static Drain-Source On-Resistance : RDS(on) =85mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Jan 7, 2021 |