JCS650S Datasheet - INCHANGE

JCS650S, N-Channel MOSFET

isc N-Channel MOSFET Transistor JCS650S

Features

* Drain Current
* ID= 28A@ TC=25℃
* Drain Source Voltage- : VDSS=200V(Min)
* Static Drain-Source On-Resistance : RDS(on) =85mΩ(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 28 A IDM Drain Current-Single Pluse 112 A PD Total Dissipation @TC=25℃ 158 W TJ Max.
Operating Junction Tempera

JCS650S-INCHANGE.pdf