K3568 Datasheet | Inchange Semiconductor

FEATURES - Drain-source on-resistance: RDS(on) ≤ 0.52Ω@10V - Low leakage current: IDSS <100 µA @VDS = 500 V - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - APPLICATIONS - Switching Regulator Applications - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage Gate-Source Voltage ±30 Drain Current-Continuous Drain Current-Single Pulsed Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 3.125 UNIT ℃/W 2SK3568 isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET...