KSE45H11 Silicon PNP Power Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor KSE45H11 .
Collector-Emitter Breakdown Voltage : V(BR)CEO= -80V(Min). High DC Current Gain : hFE= 60(Min)@ (VCE= -1V, IC= -2A). Low Saturation Volta.

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Datasheet Specifications

Part number: KSE45H11
Manufacturer: INCHANGE
File Size: 258.64 KB
Datasheet: KSE45H11-INCHANGE.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICP Collector Current-Pulse PC Total Power D

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KSE45H11 Silicon PNP Power Transistor INCHANGE

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