Full PDF Text Transcription for MBR3040PT (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MBR3040PT. For precise diagrams, and layout, please refer to the original PDF.
etal silicon junction, majority carrier conduction ·Low leakage current, low power loss, high efficiency ·High current capability and low forward voltage drop ·Guardring for overvoltage protection ·High surge capability ·Low stored charge majority carrier conduction ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·High frequency inverters ·Freewheeling diodes ·Reverse battery protection ·Polarity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRMS VR IF(AV) Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage
MBR3040PT Datasheet
