MJ12003 Datasheet - INCHANGE

MJ12003, NPN Transistor

isc Silicon NPN Power Transistor DESCRIPTION * Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 750V(Min) *High Switching Speed *Wide

Applications

* Designed for use in CRT deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1500 V VCEO(SUS) Collector-Emitter Voltage 750 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuo

MJ12003-INCHANGE.pdf