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MJ12003 NPN Transistor

MJ12003 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 750V(Min). High Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lot.

MJ12003 Applications

* Designed for use in CRT deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1500 V VCEO(SUS) Collector-Emitter Voltage 750 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuo

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Datasheet Details

Part number
MJ12003
Manufacturer
INCHANGE
File Size
201.43 KB
Datasheet
MJ12003-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE MJ12003-like datasheet