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MJ15026 NPN Transistor

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Description

isc Silicon NPN Power Transistor .
Excellent Safe Operating Area. DC Current Gain- : hFE= 25(Min. Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

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Datasheet Specifications

Part number
MJ15026
Manufacturer
INCHANGE
File Size
202.44 KB
Datasheet
MJ15026-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for high power audio, disk head positioners , and other linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 200 V VCBO Collector-Base Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuo

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