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MJE520 NPN Transistor

MJE520 Description

isc Silicon NPN Power Transistor .
High Collector Current-IC= 3. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min). Good Linearity of hFE. Low Saturatio.

MJE520 Applications

* Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 3 A ICP Collector Current-Pulse PC C

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Datasheet Details

Part number
MJE520
Manufacturer
INCHANGE
File Size
210.23 KB
Datasheet
MJE520-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE MJE520-like datasheet