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MJE53T NPN Transistor

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Description

isc Silicon NPN Power Transistor MJE53T .
Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min). Minimum Lot-to-Lot variations for robust device performance and reliable opera.

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Datasheet Specifications

Part number
MJE53T
Manufacturer
INCHANGE
File Size
205.79 KB
Datasheet
MJE53T-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 450 VCEO Collector-Emitter Voltage 350

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