Datasheet4U Logo Datasheet4U.com

MJE5730 PNP Transistor

MJE5730 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -300V(Min). DC current gain - : hFE = 30~150@ IC= -0. With TO-220 Package. Mini.

MJE5730 Applications

* Designed for line operated audio output amplifier,switchmode power supply drivers and other switching applications ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5

📥 Download Datasheet

Preview of MJE5730 PDF
datasheet Preview Page 2

Datasheet Details

Part number
MJE5730
Manufacturer
INCHANGE
File Size
213.92 KB
Datasheet
MJE5730-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • MJE5731 - 1.0 AMPERE POWER TRANSISTORS (Motorola)
  • MJE5740 - POWER DARLINGTON TRANSISTORS (Motorola)
  • MJE5741 - POWER DARLINGTON TRANSISTORS (Motorola)
  • MJE5742 - POWER DARLINGTON TRANSISTORS (Motorola)
  • MJE5190 - SILICON NPN POWER TRANSISTORS (ETC)
  • MJE5191 - SILICON NPN POWER TRANSISTORS (ETC)
  • MJE5192 - SILICON NPN POWER TRANSISTORS (ETC)
  • MJE5193 - SILICON PNP POWER TRANSISTORS (ETC)

📌 All Tags

INCHANGE MJE5730-like datasheet