Q3-2 NPN Power Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High Voltage: VCEV= 400V(Min). Low Saturation Voltage- : VCE(sat)= 1. Minimum Lot-to-Lot variations for robust device per.

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Datasheet Specifications

Part number: Q3-2
Manufacturer: INCHANGE
File Size: 185.81 KB
Datasheet: Q3-2-INCHANGE.pdf
Description: NPN Power Transistor

Applications

* Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 400 VCEV Collector-Emitter Voltage 400 VCEO Collector-Emitter Voltage 200 VEBO Emitter-Base Voltage 6 IC Collector Curr

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Q3-2 NPN Power Transistor INCHANGE

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