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R6024ENJ N-Channel MOSFET

R6024ENJ Description

isc N-Channel MOSFET Transistor *.

R6024ENJ Features

* With TO-263( D2PAK ) packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor R6024ENJ
* APPLI

R6024ENJ Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 24 13 72 PD Total Dissipation 245 Tj Operati

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Datasheet Details

Part number
R6024ENJ
Manufacturer
INCHANGE
File Size
199.44 KB
Datasheet
R6024ENJ-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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