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R6024KNJ N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number
R6024KNJ
Manufacturer
INCHANGE
File Size
315.45 KB
Datasheet
R6024KNJ-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on)≤0.165Ω
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching Voltage Regulators
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous IDM Drain Current-Single Pulsed PD Total Dissipation @TC=25℃ Tj Tstg Operating Junction And Storage Temperature

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