R6024KNJ
R6024KNJ is N-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES
- Static drain-source on-resistance:
RDS(on)≤0.165Ω
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
- Switching Voltage Regulators
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Single Pulsed
Total Dissipation @TC=25℃
Tj Tstg
Operating Junction And Storage Temperature
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c)
Channel-to-case thermal resistance
- ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
BVDSS
Drain-Source Breakdown Voltage
CONDITIONS VGS=0V; ID= 1m A
VGS(th) Gate Threshold Voltage
VDS=VGS; ID= 0.36m A
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 11.3A
IGSS
Gate-Source Leakage...
