Part number: R6030KNX
Manufacturer: INCHANGE
File Size: 247.78KB
Download: 📄 Datasheet
Description: N-Channel MOSFET
Part number: R6030KNX
Manufacturer: INCHANGE
File Size: 247.78KB
Download: 📄 Datasheet
Description: N-Channel MOSFET
*Drain Current
–ID= 30A@ TC=25℃
*Drain Source Voltage-
: VDSS=600V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 130mΩ(Max)
*100% av.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source .
*Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current.
Image gallery
TAGS
📁 Related Datasheet
R6030KNZ - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
R6030KNZ
FEATURES ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Re.
R6030KNZ1 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
R6030KNZ1
FEATURES ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-R.
R6030422 - Fast Recovery Rectifier
(Powerex Power Semiconductors)
.
R6030425 - Fast Recovery Rectifier
(Powerex Power Semiconductors)
.
R6030435 - Fast Recovery Rectifier
(Powerex Power Semiconductors)
.
R6030622 - Fast Recovery Rectifier
(Powerex Power Semiconductors)
.
R6030625 - Fast Recovery Rectifier
(Powerex Power Semiconductors)
.
R6030635 - Fast Recovery Rectifier
(Powerex Power Semiconductors)
.
R6030822 - Fast Recovery Rectifier
(Powerex Power Semiconductors)
.
R6030825 - Fast Recovery Rectifier
(Powerex Power Semiconductors)
.