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R6530ENX

N-Channel MOSFET

R6530ENX Features

* Drain Current

* ID= 30A@ TC=25℃

* Drain Source Voltage- : VDSS=650V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 140mΩ(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Designed for use

R6530ENX General Description


*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Plus.

R6530ENX Datasheet (247.84 KB)

Preview of R6530ENX PDF

Datasheet Details

Part number:

R6530ENX

Manufacturer:

INCHANGE

File Size:

247.84 KB

Description:

N-channel mosfet.

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TAGS

R6530ENX N-Channel MOSFET INCHANGE

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