RCJ200N20 Datasheet, Mosfet, INCHANGE

RCJ200N20 Features

• Mosfet
• Drain Current
    –ID= 20A@ TC=25℃
• Drain Source Voltage- : VDSS=200V(Min)
• Static Drain-Source On-Resistance : RDS(on) = 130mΩ(Max)
• 100% a

PDF File Details

Part number:

RCJ200N20

Manufacturer:

INCHANGE

File Size:

249.87kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

RCJ200N20 Application

• Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continu

TAGS

RCJ200N20

INCHANGE

📁 Related Datasheet

RCJ200N20 - Power MOSFET (ROHM)
RCJ200N20 Nch 200V 20A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 200V 130m 20A 106W Features 1) Low on-resistance. 2) Fast switching sp.

RCJ220N25 - Power MOSFET (Rohm)
RCJ220N25 Nch 250V 22A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 250V 140m 22A 166W Features 1) Low on-resistance. 2) Fast switching spe.

RCJ220N25 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor RCJ220N25 FEATURES ·Drain Current –ID= 22A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-R.

RCJ050N25 - Power MOSFET (ROHM)
RCJ050N25 Nch 250V 5.0A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 250V 1360mW 5.0A 30W lFeatures 1) Low on-resistance. 2) Fast switching s.

RCJ050N25 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor RCJ050N25 FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-Re.

RCJ080N25 - Power MOSFET (ROHM)
RCJ080N25 Nch 250V 8.0A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 250V 600mW 8.0A 35W lFeatures 1) Low on-resistance. 2) Fast switching sp.

RCJ081N20 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor RCJ081N20 FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Static Drain-Source On-Re.

RCJ081N20 - Power MOSFET (ROHM)
RCJ081N20 Nch 200V 8.0A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 200V 770mW 8.0A 40W lFeatures 1) Low on-resistance. 2) Fast switching sp.

RCJ100N25 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor RCJ100N25 FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-R.

RCJ100N25 - Power MOSFET (ROHM)
RCJ100N25 Nch 250V 10A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 250V 320m 10A 85W Features 1) Low on-resistance. 2) Fast switching spee.