RCX081N20 - N-Channel MOSFET

INCHANGE

RCX081N20 Datasheet Preview — Preview of RCX081N20 PDF

Datasheet Details

Part number	RCX081N20
Manufacturer	INCHANGE
File Size	247.16 KB
Description	N-Channel MOSFET
Datasheet	RCX081N20-INCHANGE.pdf

RCX081N20 Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Pluse 32 A PD Total Dissipation @TC=25℃ 40 W TJ Max.Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resist

Features

Drain Current.
ID= 8A@ TC=25℃.
Drain Source Voltage- : VDSS=200V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.77Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 RCX081N20 Similar Datasheet

RCX080N25 - Nch 250V 8A Power MOSFET (Rohm)
RCX050N25 - 10V Drive Nch MOSFET (Rohm)
RCX051N25 - Power MOSFET (ROHM)
RCX100N25 - Nch 250V 10A Power MOSFET (Rohm)
RCX120N20 - Power MOSFET (ROHM)
RCX120N25 - Nch 250V 12A Power MOSFET (Rohm)
RCX200N20 - Power MOSFET (Rohm)
RCX220N25 - Nch 250V 22A Power MOSFET (ROHM)

Other Datasheets by INCHANGE

RCX160N20 - N-Channel MOSFET
RCX300N20 - N-Channel MOSFET
RCX330N25 - N-Channel MOSFET
RCX450N20 - N-Channel MOSFET
RCX511N25 - N-Channel MOSFET
RCX700N20 - N-Channel MOSFET

Published: Mar 1, 2021 |