RCX081N20 N-Channel MOSFET

INCHANGE

RCX081N20 Description

isc N-Channel MOSFET Transistor RCX081N20 .
Designed for use in switch mode power supplies and general purpose applications.

RCX081N20 Features

* Drain Current
* ID= 8A@ TC=25℃
* Drain Source Voltage- : VDSS=200V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.77Ω(Max)
* 100% avalanche tested

RCX081N20 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Pluse 32 A PD Total Dissipation @TC=25℃ 40 W TJ Max. Operating Junction Temperatur

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RCX081N20 Datasheet Preview — Preview of RCX081N20 PDF

Datasheet Details

Part number: RCX081N20
Manufacturer: INCHANGE
File Size: 247.16 KB
Datasheet: RCX081N20-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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