RJ1G12BGN N-Channel MOSFET

INCHANGE

RJ1G12BGN Description

isc N-Channel MOSFET Transistor RJ1G12BGN .
Designed for use in switch mode power supplies and general purpose applications.

RJ1G12BGN Features

* Drain Current
* ID= 120A@ TC=25℃
* Drain Source Voltage- : VDSS=40V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 1.86mΩ(Max)
* 100% avalanche tested

RJ1G12BGN Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 120 A IDM Drain Current-Single Pluse 240 A PD Total Dissipation @TC=25℃ 178 W TJ Max. Operating Junction Tempera

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Datasheet Details

Part number: RJ1G12BGN
Manufacturer: INCHANGE
File Size: 249.54 KB
Datasheet: RJ1G12BGN-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

INCHANGE RJ1G12BGN-like datasheet