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RJ1G12BGN

N-Channel MOSFET

RJ1G12BGN Features

* Drain Current

* ID= 120A@ TC=25℃

* Drain Source Voltage- : VDSS=40V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 1.86mΩ(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Designed for use

RJ1G12BGN General Description


*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 120 A IDM Drain Current-Single Plus.

RJ1G12BGN Datasheet (249.54 KB)

Preview of RJ1G12BGN PDF

Datasheet Details

Part number:

RJ1G12BGN

Manufacturer:

INCHANGE

File Size:

249.54 KB

Description:

N-channel mosfet.

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