SDT7B04 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor SDT7B04 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min. DC Current Gain- : hFE= 20~250(Min. Minimum Lot-to-Lot variations.

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SDT7B04 Datasheet Preview — Preview of SDT7B04 PDF

Datasheet Specifications

Part number: SDT7B04
Manufacturer: INCHANGE
File Size: 178.73 KB
Datasheet: SDT7B04-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for B&W TV horizontal output,regulated power supply and power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Curren

SDT7B04 Distributors

📁 Related Datasheet

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SDT7B04 NPN Transistor INCHANGE

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