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SPD06N80C3 N-Channel MOSFET

SPD06N80C3 Description

isc N-Channel MOSFET Transistor SPD06N80C3,ISPD06N80C3 *.

SPD06N80C3 Features

* Static drain-source on-resistance: RDS(on)≤0.9Ω
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High peak current capability
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER

SPD06N80C3 Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
SPD06N80C3
Manufacturer
INCHANGE
File Size
240.52 KB
Datasheet
SPD06N80C3-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE SPD06N80C3-like datasheet