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SPI11N60CFD

N-Channel MOSFET

SPI11N60CFD Features

* Static drain-source on-resistance: RDS(on) ≤0.44Ω

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRIPTION

* Ultra low gate charge

* High peak current capability

SPI11N60CFD General Description


*Ultra low gate charge
*High peak current capability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 28 PD Total Dissipation @TC=25℃ 125 T.

SPI11N60CFD Datasheet (282.50 KB)

Preview of SPI11N60CFD PDF

Datasheet Details

Part number:

SPI11N60CFD

Manufacturer:

INCHANGE

File Size:

282.50 KB

Description:

N-channel mosfet.

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SPI11N60CFD N-Channel MOSFET INCHANGE

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