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SPI11N60CFD - N-Channel MOSFET

SPI11N60CFD Description

isc N-Channel MOSFET Transistor *.
Ultra low gate charge. High peak current capability. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Volt.

SPI11N60CFD Features

* Static drain-source on-resistance: RDS(on) ≤0.44Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

SPI11N60CFD Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
SPI11N60CFD
Manufacturer
INCHANGE
File Size
282.50 KB
Datasheet
SPI11N60CFD-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE SPI11N60CFD-like datasheet