SPW11N60S5 - N-Channel MOSFET
SPW11N60S5 Features
* Static drain-source on-resistance: RDS(on)≤380mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Improved transconductance
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER
