SQ2318AES - N-Channel MOSFET

Datasheet Summary

Features

Low drain-source on-resistance: RDS(on) ≤45mΩ.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	SQ2318AES
Manufacturer	INCHANGE
File Size	274.38 KB
Description	N-Channel MOSFET
Datasheet	SQ2318AES Datasheet
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isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤45mΩ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Provides the designer with an extremely efficient and reliable device for use in battery and load management. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous@TA=25℃ IDM Drain Current-Single Pulsed PD Total Dissipation @TA=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-a) Channel-to-ambient thermal resistance SQ2318AES VALUE 40 ±20 5 20 1.

Published: Dec 3, 2020 |