TIP147F Datasheet - INCHANGE

TIP147F, PNP Transistor

isc Silicon PNP Darlington Power Transistor TIP147F DESCRIPTION *High DC Current Gain *Monolithic construction with built in Base-Emitter sh

Applications

* Designed for general purpose amplifier and low frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous

TIP147F-INCHANGE.pdf