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TJ11A10M3 N-Channel MOSFET

TJ11A10M3 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor TJ11A10M3，ITJ11A10M3 *.

TJ11A10M3 Features

* Low drain-source on-resistance: RDS(on) ≤130mΩ. (VGS = -10 V)
* Enhancement mode: Vth = -2.0 to -4.0V (VDS = -10 V, ID=-1mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Switching Voltage Regulators

TJ11A10M3 Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
TJ11A10M3
Manufacturer
INCHANGE
File Size
238.32 KB
Datasheet
TJ11A10M3-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE TJ11A10M3-like datasheet