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TJ11A10M3 - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	TJ11A10M3
Manufacturer	INCHANGE
File Size	238.32 KB
Description	N-Channel MOSFET
Datasheet	TJ11A10M3-INCHANGE.pdf

TJ11A10M3 Product details

Features

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Low drain-source on-resistance: RDS(on) ≤130mΩ. (VGS = -10 V).
Enhancement mode: Vth = -2.0 to -4.0V (VDS = -10 V, ID=-1mA).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 4, 2020 |