TJ11A10M3 Datasheet, Mosfet, INCHANGE

TJ11A10M3 Features

• Mosfet
• Low drain-source on-resistance: RDS(on) ≤130mΩ.(VGS = -10 V)
• Enhancement mode: Vth = -2.0 to -4.0V (VDS = -10 V, ID=-1mA)
• 100% avalanche tested
• Minim

PDF File Details

Part number:

TJ11A10M3

Manufacturer:

INCHANGE

File Size:

238.32kb

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📄 Datasheet

Description:

N-channel mosfet.

TJ11A10M3 Application

• Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

TJ11A10M3

INCHANGE

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