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TJ11A10M3 Datasheet - INCHANGE

TJ11A10M3 N-Channel MOSFET

TJ11A10M3 Features

* Low drain-source on-resistance: RDS(on) ≤130mΩ.(VGS = -10 V)

* Enhancement mode: Vth = -2.0 to -4.0V (VDS = -10 V, ID=-1mA)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* Switching Voltage Regulators

TJ11A10M3-INCHANGE.pdf

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Datasheet Details

Part number:

TJ11A10M3

Manufacturer:

INCHANGE

File Size:

238.32 KB

Description:

N-channel mosfet.

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TJ11A10M3 TJ11A10M3 N-Channel MOSFET INCHANGE

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