TJ9A10M3 Datasheet, Mosfet, INCHANGE

TJ9A10M3 Features

  • Mosfet
  • Low drain-source on-resistance: RDS(on) ≤0.17Ω. (VGS = -10 V)
  • Enhancement mode: Vth = -2.0 to -4.0V (VDS = -10 V, ID=-1mA)
  • 100% avalanche tested
  • Mini

PDF File Details

Part number:

TJ9A10M3

Manufacturer:

INCHANGE

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239.09kb

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📄 Datasheet

Description:

N-channel mosfet.

Datasheet Preview: TJ9A10M3 📥 Download PDF (239.09kb)
Page 2 of TJ9A10M3

TJ9A10M3 Application

  • Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

TJ9A10M3
N-Channel
MOSFET
INCHANGE

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Stock and price

part
Toshiba America Electronic Components
P-CHANNEL SILICON MOSFET Power Field-Effect Transistor, 9A I(D), 100V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ComSIT USA
TJ9A10M3S4QM
2890 In Stock
0
Unit Price : $0
No Longer Stocked
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