PJ99 Silicon Junction Field-Effect Transistor
F-30 01/99 PJ99 Process Silicon Junction Field-Effect Transistor General Purpose Amplifier Analog Switch Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C G S-D S-D G Die Size = 0.021" X 0.021" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the PJ99 Process. Datasheet 2N3993, 2N3993A 2N3994, 2N3994A 2N5114, 2N5115 2N5116 2SJ44 IFN5114, IFN51.