FTW20N50A - N-Channel MOSFET
FTW20N50A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and highe
FTW20N50A Features
* z Fast Switching z Low ON Resistance(RdsoQİ z Low Gate Charge (Typical Data:130nC) z Low Reverse transfer capacitances(Typical:65pF) z 100% Single Pulse avalanche energy Test Applications˖ Power switch circuit of electron ballast and adaptor. Absolute˄Tc= 25ć unless otherwise specified˅˖ VDS
