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FTW20N50A N-Channel MOSFET

IPS

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Description

FTW20N50A General .
FTW20N50A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve swit.

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Datasheet Specifications

Part number: FTW20N50A
Manufacturer: IPS
File Size: 278.48 KB
Datasheet: FTW20N50A-IPS.pdf
Description: N-Channel MOSFET

Applications

* Power switch circuit of electron ballast and adaptor. Absolute˄Tc= 25ć unless otherwise specified˅˖ VDSS ID PD (TC=25ć) RDS(ON) TO
* 3P(N) 500 20 230 0.26 V A W Symbol VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJˈTstg TL Parameter Drain-to-Source Voltage Continuous Drain Curre

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FTW20N50A N-Channel MOSFET IPS

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