F1404ZS - Power MOSFET

IRF

F1404ZS Datasheet Preview — Preview of F1404ZS PDF

Datasheet Details

Part number	F1404ZS
Manufacturer	IRF
File Size	307.34 KB
Description	Power MOSFET
Datasheet	F1404ZS-IRF.pdf

F1404ZS Product details

Description

S ID = 75A Absolute Maximum Ratings Parameter TO-220AB IRF1404Z D2Pak IRF1404ZS Max.190 130 75 750 220 TO-262 IRF1404ZL Units A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy Single Pu

Features

l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 3.7mΩ This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make t.

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Published: May 5, 2014 |