F1404ZS Datasheet - IRF

F1404ZS Power MOSFET

S ID = 75A Absolute Maximum Ratings Parameter TO-220AB IRF1404Z D2Pak IRF1404ZS Max. 190 130 75 750 220 TO-262 IRF1404ZL Units A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VG.

F1404ZS Features

* l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 3.7mΩ This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re

F1404ZS-IRF.pdf