IRHM2C50SE Datasheet - IRF

IRHM2C50SE N-Channel Transistor

Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1252B REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR ® IRHM2C50SE IRHM7C50SE N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD 600Volt, 0.60Ω, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical speci.

IRHM2C50SE Features

* n n n n n n n n n n n n n Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating

IRHM2C50SE Datasheet (134.38 KB)