IS35ML04G084, IS34ML04G084 - 4Gb(x8) 3.3V NAND FLASH MEMORY

ISSI

Datasheet Details

Part number	IS35ML04G084, IS34ML04G084
Manufacturer	ISSI
File Size	1.30 MB
Description	4Gb(x8) 3.3V NAND FLASH MEMORY
Datasheet	IS34ML04G084-ISSI.pdf
Note	This datasheet PDF includes multiple part numbers: IS35ML04G084, IS34ML04G084. Please refer to the document for exact specifications by model.

Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell.
Highest performance - Read Performance - Random Read: 25us (Max. ) - Serial Access: 25ns (Max. ) - Write Performance - Program time: 300us - typical - Block Erase time: 3ms.
typical.
Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.6V.

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Published: Apr 30, 2019 |