IS46LD16160B - 256Mb Mobile LPDDR2 S4 SDRAM

ISSI

IS46LD16160B Datasheet Preview — Preview of IS46LD16160B PDF

Datasheet Details

Part number	IS46LD16160B
Manufacturer	ISSI
File Size	4.09 MB
Description	256Mb Mobile LPDDR2 S4 SDRAM
Datasheet	IS46LD16160B-ISSI.pdf

IS46LD16160B Product details

Description

JUNE 2022 The IS43/46LD16160B/32800B is 256Mbit CMOS LPDDR2 DRAM.The device is organized as 4 banks of 4Meg words of 16bits or 2Meg words of 32bits.This product uses a double-data-rate architecture to achieve high-speed operation.The double data rate architecture is essentially a 4N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins.This product offers fully synchronous operations referenced to both rising and falling edges of the cl

Features

Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V.
High Speed Un-terminated Logic(HSUL_12) I/O Interface.
Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O).
Four-bit Pre-fetch DDR Architecture.
Multiplexed, double data rate, command/address inputs.
Four internal banks for concurrent operation.
Bidirectional/differential data strobe per byte of d.

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Published: Jul 15, 2024 |