Datasheet4U Logo Datasheet4U.com

IS46LD16160B - 256Mb Mobile LPDDR2 S4 SDRAM

General Description

The IS43/46LD16160B/32800B is 256Mbit CMOS LPDDR2 DRAM.

The device is organized as 4 banks of 4Meg words of 16bits or 2Meg words of 32bits.

This product uses a double-data-rate architecture to achieve high-speed operation.

Key Features

  • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V.
  • High Speed Un-terminated Logic(HSUL_12) I/O Interface.
  • Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O).
  • Four-bit Pre-fetch DDR Architecture.
  • Multiplexed, double data rate, command/address inputs.
  • Four internal banks for concurrent operation.
  • Bidirectional/differential data strobe per byte of d.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IS46R16160F 256Mb DDR SDRAM Integrated Silicon Solution
IS46R16320D 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM Integrated Silicon Solution
IS46R16320E 512Mb DDR SDRAM Integrated Silicon Solution
IS46R16800E 128Mb DDR SDRAM Integrated Silicon Solution
IS46R32160D 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS46LD16160A 256Mb Mobile LPDDR2 S4 SDRAM
IS46LD16128B 2Gb Mobile LPDDR2 S4 SDRAM
IS46LD16320A 512Mb Mobile LPDDR2 S4 SDRAM
IS46LD16640A 1Gb Mobile LPDDR2 S4 SDRAM
IS46LD16640C 1Gb Mobile LPDDR2 S4 SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS43/46LD16160B IS43/46LD32800B 256Mb (x16, x32) Mobile LPDDR2 S4 SDRAM FEATURES • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.