IS66WVS16M8FBLL
Description
The IS66/67WVS16M8FALL/BLL are integrated memory device containing 128Mb Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 16M words by 8 bits. The device is a dual die stack of two 64Mb die.
Key Features
- Industry Standard Serial Interface - SPI Protocol: 1-1-1 & 1-4-4 operation - QPI protocol: 4-4-4 operation - Low Signal Counts :6 Signal pins (CE#, CLK, SIO0~SIO3) - Dual stack die of two 64Mb
- High Performance - Clock Rate: 33MHz(max) for normal read 104MHz(max) for fast read - Page Size: 1024 Byte - Configurable Wrapped Burst Length: 32 and 1024 (Default=1024) - Always Wrapped Burst Operation within page. - Die Boundary Crossing is not allowed during Wrapped Burst operation. - Drive Strength: 50ohm
- Low Power Consumption - Single 1.65V to 1.95V Voltage Supply - Single 2.7V to 3.6V Voltage Supply - Typical Standby Current: 240 µA for 1.8V, 300uA for 3.0V
