44N60 IXFN44N60

IXYS Corporation

Description

HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol www.DataSheet4U.com VDSS VDGR VGS VG.

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Datasheet Specifications

Part number: 44N60
Manufacturer: IXYS Corporation
File Size: 163.09 KB
Datasheet: 44N60_IXYSCorporation.pdf
Description: IXFN44N60

Features

* International standard package
* miniBLOC, with Aluminium nitride
* isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifi

Applications

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 100 2 130 V V nA mA mA mW
* DC-DC converters
* Battery chargers
* Switched-mode and resonant-mode power supplies VDSS VGH(th) IGSS ID

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44N60 IXFN44N60 IXYS Corporation

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