7N60B Datasheet - IXYS Corporation

7N60B Hiperfast IGBT

www.DataSheet4U.com HiPerFASTTM IGBT IXGA 7N60B IXGP 7N60B VCES IC25 VCE(sat) tfi = 600 V = 14 A = 2 V = 150 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 300 µH TC = 25°C Maximum Ratings 600 600 ±20 ±30 14 7 30 ICM = 14 @ 0.8 VCES 54 -55 +150 150 -55 +150 300 Μ3 Μ3.5 0.45/4 0.5.

7N60B Features

* G = Gate, E = Emitter, E C (TAB) C = Collector, TAB = Collector Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, (TO-220) TO-220 TO-263

* International standard packages JEDEC TO-263 surface mountable and JEDEC TO-220 AB

* M

7N60B Datasheet (98.25 KB)

7N60B Datasheet Preview — Preview of 7N60B PDF

Datasheet Details

Part number:

7N60B

Manufacturer:

IXYS Corporation

File Size:

98.25 KB

Description:

Hiperfast igbt.

📁 Related Datasheet

7N60 N-Channel Power MOSFET (nELL)

7N60 N-CHANNEL MOSFET (UTC)

7N60 N-CHANNEL MOSFET (KIA)

7N60 N-Channel MOSFET (INCHANGE)

7N60-CB N-CHANNEL MOSFET (UTC)

7N60-F N-CHANNEL POWER MOSFET (Unisonic Technologies)

7N60-M N-CHANNEL POWER MOSFET (Unisonic Technologies)

7N60-Q N-CHANNEL POWER MOSFET (Unisonic Technologies)

7N60-R N-CHANNEL POWER MOSFET (Unisonic Technologies)

7N60-TC N-CHANNEL MOSFET (UTC)

TAGS

7N60B Hiperfast IGBT IXYS Corporation

7N60B Distributor